Speaker: Dr. Stefano Bosco (University of Basel)

Abstract: "Holes confined in semiconductor nanowires present an extremely large effective spin-orbit coupling. While this coupling enables fast and fully electrically tunable gates in spin-qubits, it also enhances the susceptibility of these qubits to charge noise. I will show that hole Si FinFETs are not only very compatible with modern CMOS technology, but they can be tuned to work at operational sweet spots where the charge noise is completely removed. The presence of these sweet spots is a result of the interplay between the anisotropy of the material and the triangular shape of the FinFET cross-section, and it does not require an extreme fine-tuning of the electrostatics of the device. I will present different designs that maximize the performance of hole qubits in Si FinFETs and could pave the way towards a scalable spin-based quantum computer."

Zoom link: https://unibas.zoom.us/j/93412050526?pwd=akhVbnZ5ZE1wYzRaQ0NxRVEzTWZOdz09

Meeting ID: 934 1205 0526

Passcode: 592673